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    Cree

    目錄
    Cree 公司是市場上領先的革新者與半導體的制造商,以顯著地提高固態照明,電力及通訊產品的能源效果來提高它們的價值。

    Cree

    Cree 公司是市場上領先的革新者與半導體的制造商,以顯著地提高固態照明,電力及通訊產品的能源效果來提高它們的價值。

    Cree 的市場優勢關鍵來源于我們在有氮化鎵(GaN) 的碳化硅 (SiC) 方面上獨一的材料專長知識,來制造芯片及成套的器件。這些芯片及成套的器件可在很小的空間里用更大的功率,同時比別的現有技術,材料及產品放熱更少。

    Cree 把能源回歸解決方案 (ROE™) 用于多種用途,包括在更亮及可調節的發光二極管光一般照明,更鮮艷的背光顯示,高電流開關電源和變轉速電動機的最佳電力管理,和更為有效的數據與聲音通訊的無線基礎設施等方面有令人興奮的可選擇的方案 。 Cree 的顧客有從創新照明燈具制造商到與國防有關的聯邦機構。

    Cree 的產品系列包括藍的和綠的發光二極管芯片,照明發光二極管,背光發光二極管,為功率開關器件,無線電頻率設備和無線電設備的發光二極管。 

    Cree 歷程

    Major Business and Product Milestones

    1980s
    July 1987 Cree founded
    August 1989 Introduced first blue LED
    1990s
    October 1991 Released world’s first commercial SiC wafers
    February 1993 Initial public offering
    August 1993 Introduced 4H SiC wafer
    September 1993 Introduced brighter version blue LED
    October 1993 Developed SiC microwave transistors operating up to 12.9 GHz
    June 1995 Introduced Nitride-based blue LED
    May 1997 Announced reduced micropipe 4 HN SiC wafers
    June 1997 Demonstrated pulsed GaN blue laser at room temperature
    September 1997 Introduced 2-inch SiC wafer
    March 1998 Demonstrated high-power microwave SiC MESFET
    May 1999 Introduced InGaN blue and green LEDs
    June 1999 Introduced 48 V, 10 W SiC MESFET RF device
    October 1999 Demonstrated 4-inch SiC wafer
    2000
    May Demonstrated 12.3 kV high-efficiency SiC power rectifier
    June Introduced lower-current InGaN blue and green LEDs
    August Announced high-power 10 GHz GaN HEMT
    October Introduced UltraBright® blue and green LEDs
    2001
    February Demonstrated 32-percent quantum efficiency with near-UV LED
    April Introduced 3-inch 4H SiC wafers
    May Introduced MegaBright® blue LED
    July Introduced 4H and 6H 3-inch SiC wafers
    July Introduced first SiC Schottky diodes
    July Introduced 12 mW UV LEDs
    October Introduced XBright® blue LED
    November Introduced green 505 MegaBright LED
    November Announced blue laser lifetimes in excess of 1,000 hours
    December Demonstrated 108 W at 2 GHz from GaN RF devices
    2002
    January Introduced 10-A, 600-V, SiC Schottky rectifier
    January Introduced green 525 MegaBright LED
    February Introduced XBright power chip
    August Introduced 20-A, 600-V, Zero Recovery® SiC rectifier
    2003
    February Released 1200 V SiC Schottky rectifier
    March Introduced second-generation SiC MESFET RF transistor
    June Introduced MegaBright Plus™ and XBright Plus™ blue LEDs
    June Introduced LDMOS products for avionics and radar markets
    June Demonstrated 100 mm semi-insulating SiC substrates
    July Introduced RazerThin® LED products
    2004
    January Expanded XThin® LED product family
    May Launched brighter XThin LED product
    July Launched XLamp® LED product line
    November Announced XLamp 7090
    2005
    February Achieved standard LED efficiency of 100 lumens/watt in R&D
    February Achieved 56 lumens from one-watt white XLamp LED in R&D
    May Introduced brighter blue and green XB900™ power LEDs for LCD BL
    May Introduced Colorwave™ backlight solution for LCD TVs & monitors
    June Introduced MegaBright 290 Gen 2 LED Product
    June Introduced RazerThin 230 LED product
    June Introduced SiC MESFETS for WiMAX power amplifiers
    July Introduced 3-watt XLamp
    September Achieved 70 lumens per watt with XLamp 7090 LED in R&D
    September Introduced 100mm (4”) SiC substrate and epitaxy material
    2006
    January Demonstrated a 100-kVA SiC Three Phase Inverter
    February Introduced the XR series of XLamp LEDs
    March Introduced the EZBright™ family of LED chips
    April Introduced the EZR™ LED chip for the EZBright family
    May Introduced GaN HEMT for WiMAX power transistors
    June Demonstrated a 131-lumens/watt white LED
    June Demonstrated 400 watts of RF power for GaN S-Band transistors
    July Introduced 2-amp rectifier for PC power supplies
    August Introduced EZBright1000™ LED power chip for general lighting applications
    October Delivered the XLamp XR-E Series LED, the first 160-lumen white power LED
    2007
    February Introduced the XLamp XR-C series of LEDs
    February Introduced the EZBright700 LED power chip
    March Expanded the XLamp XR-E and XR-C series of LEDs with warm white color temperatures
    April Acquired COTCO Luminant Device Ltd. of Hong Kong
    May Demonstrated 100-mm, Zero Micropipe SiC substrates
    June Introduced GaN HEMT for broadband applications
    June Introduced blue XLamp XR-E LEDs
    June Announced commercial availability of XLamp LEDs with minimum luminous flux of 100 lumens at 350 mA
    September Achieved 1,000 lumens from a single LED
    October Introduced 8-A, 600-V, Zero Recovery SiC rectifier for computer servers
    October Announced commercial release of 100-mm, Zero Micropipe SiC substrates
     


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